IRF530 IRF530fi n - channel enhancement mode power mos transistor n typical r ds(on) = 0.12 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n dc-dc & dc-ac converter n automotive environment (injection, abs, air-bag, lamp drivers etc.) internal schematic diagram march 1998 to-220 to-220fi 1 2 3 1 2 3 absolute maximum ratings symbol parameter value unit IRF530 IRF530fi v ds drain-source voltage (v gs =0) 100 v v dgr drain- gate voltage (r gs =20k w ) 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c1611a i d drain current (continuous) at t c =100 o c117.8a i dm ( ? ) drain current (pulsed) 64 64 a p tot total dissipation at t c =25 o c9040w derating factor 0.6 0.27 w/ o c viso insulation withstand voltage (dc) - 2000 v t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 11 a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds(on) i d IRF530 IRF530fi 100 v 100 v <0.16 w <0.16 w 16 a 11 a 1/6
thermal data to-220 to220-fi r thj-case thermal resistance junction-case max 1 3.75 o c/w r t hj- amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 16 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 100 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 900 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d =8a 0.12 0.16 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 16 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =8a 5 8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 950 150 50 1300 270 70 pf pf pf IRF530/IRF530fi 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =50v i d =8a r g =4.7 w v gs =10v 12 20 16 28 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =80 v i d =16 a v gs =10v 32 9 13 44 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =80v i d =16 a r g =4.7 w v gs =10v 11 12 25 15 17 35 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 16 64 a a v sd ( * ) forward on voltage i sd =16a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =16 a di/dt = 100 a/ m s v dd =30v t j =150 o c 150 0.8 10 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area IRF530/IRF530fi 3/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c IRF530/IRF530fi 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g IRF530/IRF530fi 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... IRF530/IRF530fi 6/6
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